IXTH260N055T2
40
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
32
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
38
36
34
32
R G = 2 ?
V GS = 10V
V DS = 28V
31
30
T J = 125oC
R G = 2 ?
V GS = 10V
V DS = 28V
30
I
D
= 200A
29
28
26
24
28
22
I
D
= 100A
27
20
18
26
16
14
12
25
24
T J = 25oC
25
35
45
55
65
75
85
95
105
115
125
40
60
80
100
120
140
160
180
200
T J - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
I D - Amperes
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
160
90
55
60
140
120
100
80
60
40
20
0
t r t d(on) - - - -
T J = 125oC, V GS = 10V
V DS = 28V
I D = 200A, 100A
80
70
60
50
40
30
20
10
50
45
40
35
30
25
20
15
t f t d(off) - - - -
R G = 2 ? , V GS = 10V
V DS = 28V
I D = 200A, 100A
55
50
45
40
35
30
25
20
2
4
6
8
10
12
14
16
25
35
45
55
65
75
85
95
105
115
125
R G - Ohms
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
T J - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
44
65
275
240
40
36
32
28
24
20
t f t d(off) - - - -
R G = 2 ? , V GS = 10V
V DS = 28V
T J = 125oC
T J = 25oC
60
55
50
45
40
35
250
225
200
175
150
125
100
t f t d(off) - - - -
T J = 125oC, V GS = 10V
V DS = 28V
I D = 100A, 200A
220
200
180
160
140
120
100
75
80
16
12
8
30
25
20
50
25
0
60
40
20
40
60
80
100
120
140
160
180
200
2
4
6
8
10
12
14
16
I D - Amperes
? 2008 IXYS CORPORATION, All rights reserved
R G - Ohms
相关PDF资料
IXTH280N055T MOSFET N-CH 55V 280A TO-247
IXTH28N50Q MOSFET N-CH 500V 28A TO-247
IXTH2R4N120P MOSFET N-CH 1200V 2.4A TO-247
IXTH30N25 MOSFET N-CH 250V 30A TO-247
IXTH30N50P MOSFET N-CH 500V 30A TO-247
IXTH30N50 MOSFET N-CH 500V 30A TO-247
IXTH360N055T2 MOSFET N-CH 55V 360A TO-247
IXTH36P10 MOSFET P-CH 100V 36A TO-247
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